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Probing pairing symmetry of Sm1.85Ce0.15CuO4 via highly-sensitive voltage measurements: Evidence for strong impurity scattering

A. J. C. Lanfredi, S. Sergeenkov, F. M. Araujo-Moreira

cond-mat.supr-conarXiv:cond-mat/0701455

Abstract

Using a highly-sensitive home-made mutual-inductance technique, temperature profiles of the magnetic penetration depth λ(T) in the optimally-doped Sm1.85Ce0.15CuO4 thin films have been extracted. The low-temperature behavior of λ(T) is found to be best-fitted by linear Δλ(T)/λ(0)= (2)kBT/Δ0 and quadratic Δλ(T)/λ(0)=Γ-1/2Δ0-3/2T2 laws above and below T=0.22TC, respectively, which clearly indicates the presence of d-wave pairing mechanism dominated by strong paramagnetic scattering at the lowest temperatures. The best fits produce Δ0/kBTC=2.07 and Γ/TC=0.25(TC/Δ0)3 for the estimates of the nodal gap parameter and impurity scattering rate.

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