Resolution in Focused Electron- and Ion-Beam Induced Chemical Vapor Deposition
Abstract
The key physical processes governing resolution of focused electron-beam and ion-beam-assisted chemical vapor deposition are analyzed via an adsorption rate model. We quantify for the first time how the balance of molecule depletion and replenishment determines the resolution inside the locally irradiated area. Scaling laws are derived relating the resolution of the deposits to molecule dissociation, surface diffusion, adsorption, and desorption. Supporting results from deposition experiments with a copper metalorganic precursor gas on a silicon substrate are presented and discussed.
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