Possible Metal/Insulator Transition at B=0 in Two Dimensions
Abstract
We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, ncr 1011 cm-2), CONVENTIONAL WEAK LOCALIZATION IS OVERPOWERED BY A SHARP DROP OF RESISTIVITY BY AN ORDER OF MAGNITUDE with decreasing temperature below 1--2 K. No further evidence for electron localization is seen down to at least 20 mK. For ns<Ncr, the sample is insulating. The resistivity is empirically found to SCALE WITH TEMPERATURE BOTH BELOW AND ABOVE ncr WITH A SINGLE PARAMETER which approaches zero at ns=ncr suggesting a metal/ insulator phase transition.
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