Thomas-Fermi approach to resonant tunneling in delta-doped diodes
Enrique Diez, Francisco Dominguez-Adame, Angel Sanchez
Abstract
We study resonant tunneling in B-δ-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi approach is used to obtain the conduction-band modulation. Using a scalar Hamiltonian within the effective-mass approximation we demonstrate that the occurrence of negative differential resistance (NDR) only involves conduction-band states, whereas interband tunneling effects seem to be negligible. Our theoretical results are in very good agreement with recent experimental observations of NDR in this type of diodes.
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