Model of C-Axis Resistivity of High- Cuprates
Abstract
We propose a simple model which accounts for the major features and systematics of experiments on the c-axis resistivity, c, for , and . We argue that the c-axis resistivity can be separated into contributions from in-plane dephasing and the c-axis ``barrier'' scattering processes, with the low temperature semiconductor-like behavior of c arising from the suppression of the in-plane density of states measured by in-plane magnetic Knight shift experiments. We report on predictions for c in impurity-doped materials.
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