Polarized interacting exciton gas in quantum wells and bulk semiconductors
Abstract
We develop a theory to calculate exciton binding energies of both two- and three-dimensional spin polarized exciton gases within a mean field approach. Our method allows the analysis of recent experiments showing the importance of the polarization and intensity of the excitation light on the exciton luminescence of GaAs quantum wells. We study the breaking of the spin degeneracy observed at high exciton density (5 \ \ 1010 cm 2). Energy level splitting betwen spin +1 and spin -1 is shown to be due to many-body inter-excitonic exchange while the spin relaxation time is controlled by intra-exciton exchange.
Turn this paper into a full lesson
ArcXiv compiles a staged curriculum from this paper: 8-12 lessons across beginner → advanced, synthesised section guides, visuals, flashcards, a quiz, exercises, and on-demand deep dives per section. Grounded in the abstract, never invented.