The Role of Nonequilibrium Dynamical Screening in Carrier Thermalization

Abstract

We investigate the role played by nonequilibrium dynamical screening in the thermalization of carriers in a simplified two-component two-band model of a semiconductor. The main feature of our approach is the theoretically sound treatment of collisions. We abandon Fermi's Golden rule in favor of a nonequilibrium field theoretic formalism as the former is applicable only in the long-time regime. We also introduce the concept of nonequilibrium dynamical screening. The dephasing of excitonic quantum beats as a result of carrier-carrier scattering is brought out. At low densities it is found that the dephasing times due to carrier-carrier scattering is in picoseconds and not femtoseconds, in agreement with experiments. The polarization dephasing rates are computed as a function of the excited carrier density and it is found that the dephasing rate for carrier-carrier scattering is proportional to the carrier density at ultralow densities. The scaling relation is sublinear at higher densities, which enables a comparison with experiment.