Gauge drag between half-filled Landau levels
Yong Baek Kim, A. J. Millis
Abstract
The transresistance (i.e. the voltage induced in one layer by a current in another) between composite fermions in double-layers of half-filled Landau levels is shown to be dominated by scattering due to singular gauge field fluctuations arising from the antisymmetric combination of density fluctuations in two layers. The drag rate is found to be proportional to T4/3 for T less than an energy scale Ωcr which depends on the spacing, d, between the layers. An observation of a T4/3 temperature dependence in the transresistance would be a strong evidence for the existence of the gauge field fluctuations.
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