Mobility of dislocations in semiconductors

Abstract

Atomic-scale calculations for the dynamics of the 90$^0$ partial glide dislocation in silicon are made using the effective-medium tight-binding theory. Kink formation and migration energies for the reconstructed partial dislocation are compared with experimental results for the mobility of this dislocation. The results confirm the theory that the partial moves in the dissociated state via the formation of stable kinks. The correlation between glide activation energy and band gap in semiconducting systems is discussed.