Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression
V. Kravchenko, N. Minina, A. Savin, C. B. Sorensen, O. P. Hansen, W. Kraak
Abstract
Resistance, magnetoresistance and their temperature dependencies have been investigated in the 2D hole gas at a [001] p-GaAs/Al0.5Ga0.5As heterointerface under [110] uniaxial compression. Analysis performed in the frame of hole-hole scattering between carriers in the two spin splitted subbands of the ground heavy hole state indicates, that h-h scattering is strongly suppressed by uniaxial compression. The decay time τ01 of the relative momentum reveals 4.5 times increase at a uniaxial compression of 1.3 kbar.
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