Theoretical analysis of the resistively-coupled single-electron transistor
A. N. Korotkov
Abstract
The operation of resistively-coupled single-electron transistor (R-SET) is studied quantitatively. Due to the Nyquist noise of the coupling resistance, degradation of the R-SET performance is considerable at temperatures T as small as 10-3 e2/C (where C is the junction capacitance) while the voltage gain becomes impossible at T 10-2e2/C.
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