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Resistance behavior near the magnetic-field-tuned quantum transition in superconducting amorphous In-O films

V. F. Gantmakher, M. V. Golubkov, V. T. Dolgopolov, G. E. Tsydynzhapov, A. A. Shashkin

cond-mat.str-elarXiv:cond-mat/9806244

Abstract

We have studied the magnetic-field-tuned superconductivity destroying quantum transition in amorphous In-O films with the onset of superconductivity in zero field at about 2 K. At temperatures down to 30 mK the critical resistance Rc=R(T,Bc) has been found to change approximately linearly with temperature, which is in contradiction to a standard description where zero slope dRc/dT = 0 is assumed near T=0. To make the data R(T,B) collapse in the vicinity of transition against scaling variable (B-Bc)/T1/y, one has either to allow for the intrinsic temperature dependence of Rc or to postulate the critical field Bc to be temperature-dependent Bc(T)-Bc(0)~T1+1/y. We find that the state on the high-field side of the transition can be both insulating and metallic and we determine the critical index y=1.2.

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