Electrical properties of isotopically enriched neutron-transmutation-doped 70 Ge:Ga near the metal-insulator transition
Michio Watanabe, Youiti Ootuka, Kohei M. Itoh, Eugene E. Haller
Abstract
We report the low temperature carrier transport properties of a series of nominally uncompensated neutron-transmutation doped (NTD) 70 Ge:Ga samples very close to the critical concentration Nc for the metal-insulator transition. The concentration of the sample closest to Nc is 1.0004Nc and it is unambiguously shown that the critical conductivity exponent is 0.5. Properties of insulating samples are discussed in the context of Efros and Shklovskii's variable range hopping conduction.
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