Capture of carriers to screened charged centres and low temperature shallow impurity electric field break down in semiconductors
O. Z. Alekperov
Abstract
Free carrier capture by a screened Coulomb potential in semiconductors are considered. It is established that with decreasing screening radius the capture cross section decreases drastically, and it goes to zero when % rs=aB*. On the basis of this result a new mechanism of shallow impurity electric field break down in semiconductors is suggested.
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