Ballistic Electron Emission Microscopy on CoSi2/Si(111) interfaces: band structure induced atomic-scale resolution and role of localized surface states
K. Reuter, F. J. Garcia-Vidal, P. L. de Andres, F. Flores, K. Heinz
Abstract
Applying a Keldysh Green`s function method it is shown that hot electrons injected from a STM-tip into a CoSi2/Si(111) system form a highly focused beam due to the silicide band structure. This explains the atomic resolution obtained in recent Ballistic Electron Emission Microscopy (BEEM) experiments. Localized surface states in the (2 × 1)-reconstruction are found to be responsible for the also reported anticorrugation of the BEEM current. These results clearly demonstrate the importance of bulk and surface band structure effects for a detailed understanding of BEEM data.
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