Population Inversion Induced by Resonant States in Semiconductors
M. A. Odnoblyudov, I. N. Yassievich, M. S. Kagan, Yu. M. Galperin, X. H. Wang, K. A. Chao
Abstract
We present a theoretical prediction of a new mechanism for carrier population inversion in semiconductors under an applied electric field. The mechanism is originated from a coherent capture-emission type inelastic scattering of resonant states. We support our theory with concrete calculations for shallow acceptor resonant states in strained p-Ge where a lasing in THz frequency region has been recently observed.
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