Skip to content

Kinetics of electric field induced oxygen ion migration in epitaxial metallic oxide films

Arindam Ghosh, A. K. Raychaudhuri, R. Sreekala, M. Rajeswari, T. Venkatesan

cond-mat.dis-nnarXiv:cond-mat/9811377

Abstract

In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density J ≥ 103 A/cm2). We find that the time dependence associated with the processes (increase of resistance) show a streched exponential type dependence at lower temperature, which crosses over to a creep type behavior at T ≥ 350 K. The time scale associated shows a drastic drop in the magnitude at T ≈ 350 K, where a long range diffusion sets in increasing the conductivity noise. The phenomena is like a "glass-transition" in the random lattice of oxygen ions.

Create a lesson