Maximum Metallic Conductivity in Si-MOS Structures
V. M. Pudalov, G. Brunthaler, A. Prinz, G. Bauer
Abstract
We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, Gmax, as either density increases or temperature decreases. This value Gmax is weakly disorder dependent and ranging from 100 to 140 e2/h for samples whose mobilities differ by a factor of 4.
Create a lesson
Related papers
Metallogenic quantum criticality: Fermi surface nucleation at transitions between gapped phases
Zhengyan Darius Shi
Exact Stiffness and Dynamical Responses from Fock-Space Fragmentation
Jonah Herzog-Arbeitman, Eslam Khalaf, Zhaoyu Han
A continuous confinement-deconfinement transition in a triangular quantum magnet
Suguru Hosoi, Sejun Park, Michihiro Hirata et al.
Multi-orbital physics in inverse Lieb lattice altermagnets
Mercè Roig, Jannik Gondolf, Andreas Kreisel et al.
3D- (H-theta-phi) magnetic phase diagram of antiferromagnetic metal GdB6 with electron and lattice instability
A. N. Azarevich, A. V. Bogach, T. F. Garipova et al.
Interlayer-engineering of Charge Order Wave Vector in Kagome Metals
Muntafa M. Mahi, Quazi D. M. Khosru, M. Zahid Hasan et al.