Maximum Metallic Conductivity in Si-MOS Structures
V. M. Pudalov, G. Brunthaler, A. Prinz, G. Bauer
Abstract
We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, Gmax, as either density increases or temperature decreases. This value Gmax is weakly disorder dependent and ranging from 100 to 140 e2/h for samples whose mobilities differ by a factor of 4.
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