The peculiarities of phase transitions in layered ferroelectrics-semiconductors TlIn1-xFexS2
R. M. Sardarli, A. P. Abdullayev, O. A. Samedov, N. A. Eubova, B. R. Gadjiyev
Abstract
The results of differential-thermal analysis of various samples as well as dielectric measurements of solid solutions TlIn1-xFex56,57S2 are presented. It has been established that phase transitions become blurred and shift to low temperatures with increasing the concentration of defects in the layered structure. at some threshold value the structure loses layerity, the crystal becomes isotropig and the distribution of defects does homogeneous.
Create a lesson
Related papers
Knots in Condensed Matters
Y. M. Cho
Bouchaud's model exhibits two different aging regimes in dimension one
Gerard Ben Arous, Jiri Cerny
Periodic diffraction patterns for 1D quasicrystals
Pawel Buczek, Lorenzo Sadun, Janusz Wolny
Adiabatic association of ultracold molecules via magnetic field tunable interactions
Krzysztof Goral, Thorsten Koehler, Simon A. Gardiner et al.
High-Temperature Atomic Superfluidity in Lattice Boson-Fermion Mixtures
F. Illuminati, A. Albus
Constructive Methods of Invariant Manifolds for Kinetic Problems
A. N. Gorban, I. V. Karlin, A. Yu. Zinovyev