Hubbard Fermi surface in the doped paramagnetic insulator
C. Groeber, M. G. Zacher, R. Eder
Abstract
We study the electronic structure of the doped paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model. Throughout we use the moderately high temperature T=0.33t, where the spin correlation length has dropped to < 1.5 lattice spacings, and study the evolution of the band structure with hole doping. The effect of doping can be best described as a rigid shift of the chemical potential into the lower Hubbard band, accompanied by some transfer of spectral weight. For hole dopings <20% the Luttinger theorem is violated, and the Fermi surface volume, inferred from the Fermi level crossings of the `quasiparticle band', shows a similar topology and doping dependence as predicted by the Hubbard I and related approximations.
Create a lesson
Related papers
Metallogenic quantum criticality: Fermi surface nucleation at transitions between gapped phases
Zhengyan Darius Shi
Exact Stiffness and Dynamical Responses from Fock-Space Fragmentation
Jonah Herzog-Arbeitman, Eslam Khalaf, Zhaoyu Han
A continuous confinement-deconfinement transition in a triangular quantum magnet
Suguru Hosoi, Sejun Park, Michihiro Hirata et al.
Multi-orbital physics in inverse Lieb lattice altermagnets
Mercè Roig, Jannik Gondolf, Andreas Kreisel et al.
3D- (H-theta-phi) magnetic phase diagram of antiferromagnetic metal GdB6 with electron and lattice instability
A. N. Azarevich, A. V. Bogach, T. F. Garipova et al.
Interlayer-engineering of Charge Order Wave Vector in Kagome Metals
Muntafa M. Mahi, Quazi D. M. Khosru, M. Zahid Hasan et al.