Charge sensitivity of radio frequency single-electron transistor (RF-SET)

Abstract

A theoretical analysis of the charge sensitivity of the RF-SET is presented. We use the ``orthodox'' approach and consider the case when the carrier frequency is much less than $I/e$ where $I$ is the typical current through RF-SET. The optimized noise-limited sensitivity is determined by the temperature $T$, and at low $T$ it is only 1.4 times less than the sensitivity of conventional single-electron transistor.