Charge sensitivity of radio frequency single-electron transistor (RF-SET)
Alexander N. Korotkov, Mikko A. Paalanen
Abstract
A theoretical analysis of the charge sensitivity of the RF-SET is presented. We use the ``orthodox'' approach and consider the case when the carrier frequency is much less than I/e where I is the typical current through RF-SET. The optimized noise-limited sensitivity is determined by the temperature T, and at low T it is only 1.4 times less than the sensitivity of conventional single-electron transistor.
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