Hall effect of epitaxial double-perovskite Sr2FeMoO6 thin films
W. Westerburg, F. Martin, G. Jakob
Abstract
We prepared high epitaxial thin films of the compound Sr2FeMoO6 with narrow rocking curves by pulsed laser deposition. The diagonal and nondiagonal elements of the resistivity tensor were investigated at temperatures from 4 K up to room temperature in magnetic fields up to 8 T. An electronlike ordinary Hall effect and a holelike anomalous Hall contribution are observed. Both coefficients have reversed sign compared to the colossal magnetoresistive manganites. We found at 300 K an ordinary Hall coefficent of -1.87x10-10 m3/As, corresponding to a nominal charge carrier density of four electrons per formula unit. At low temperature only a small negative magnetoresistance is observed which vanishes at higher temperatures. The temperature coefficient of the resistivity is negative over the whole temperature range. A Kondo like behavior is observed below 30 K while above 100 K variable range hopping like transport occurs.
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