Tunneling measurements of the coulomb pseudogap in a two-dimensional electron system in a quantizing magnetic field
Abstract
We study the Coulomb pseudogap for tunneling into the two-dimensional electron system of high-mobility (Al,Ga)As/GaAs heterojunctions subjected to a quantizing magnetic field at filling factor ≤ 1. Tunnel current-voltage characteristics show that for the double maximum observed in the tunnel resistance at ≈ 1 the pseudogap is linear in energy with a slope that depends on filling factor, magnetic field, and temperature. We give a qualitative account of the filling factor dependence of the pseudogap slope and we confirm the recently reported appearance of another relaxation time for tunneling at ≈ 1. For the tunnel resistance peaks at =1/3 and 2/3 a completely different behaviour of the current-voltage curves is found and interpreted as manifestation of the fractional gap.
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