Dephasing in semiconductor-superconductor structures by coupling to a voltage probe

Abstract

We study dephasing in semiconductor-superconductor structures caused by coupling to a voltage probe. We consider structures where the semiconductor consists of two scattering regions between which partial dephasing is possible. As a particular example we consider a situation with a double-barrier junction in the normal region. For a single-mode system we study the conductance both as a function of the position of the Fermi level and as a function of the barrier transparency. At resonance, where the double-barrier is fully transparent, we study the suppression of the ideal factor-of-two enhancement of the conductance when a finite coupling to the voltage probe is taken into account.