Magnetization-controlled spin transport in DyAs/GaAs layers
Abstract
Electrical transport properties of DyAs epitaxial layers grown on GaAs have been investigated at various temperatures and magnetic fields up to 12T. The measured longitudinal resistances show two distinct peaks at fields around 0.2 and 2.5T which are believed to be related to the strong spin-disorder scattering occurring at the phase transition boundaries induced by external magnetic field. An empirical magnetic phase diagram is deduced from the temperature dependent experiment, and the anisotropic transport properties are also presented for various magnetic field directions with respect to the current flow.
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