Electron localization in sound absorption oscillations in the quantum Hall effect regime
I. L. Drichko, A. M. Diakonov, A. M. Kreshchuk, T. A. Polyanskaya, I. G. Savel'ev, I. Yu. Smirnov, A. V. Suslov
Abstract
The absorption coefficient for surface acoustic waves in a piezoelectric insulator in contact with a GaAs/AlGaAs heterostructure (with two-dimensional electron mobility μ= 1.3× 105 cm2/V· s) at T=4.2K) via a small gap has been investigated experimentally as a function of the frequency of the wave, the width of the vacuum gap, the magnetic field, and the temperature. The magnetic field and frequency dependencies of the high-frequency conductivity (in the region 30-210 MHz) are calculated and analyzed. The experimental results can be explained if it assumed that there exists a fluctuation potential in which current carrier localization occurs. The absorption of the surface acoustic waves in an interaction with two-dimensional electrons localized in the energy "tails" of Landau levels is discussed.
Create a lesson
Related papers
Distinguishing Quantum Capacitance Signatures of a Topological Majorana Wire from a Normal Wire Segment
Binayyak Bhusan Roy, Jay Deep Sau, Sumanta Tewari
Band's Geometry Origin of Quantum Spin Transport Phenomena
Elena Derunova, Mazhar N. Ali
Trapping e/4 quasiparticles in bilayer graphene
Mario Di Luca, Emily Hajigeorgiou, Ning Ma et al.
Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices
Gabriel Natale, Uma Chirkova, Flávio Henriques Feres et al.
Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra et al.
Occupation-Driven Josephson Diode in a Symmetric Junction
Jianxiong Zhai, Zelei Zhang, Jiawei Yan