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Internal Friction of Amorphous Silicon in a Magnetic Field

T. H. Metcalf, Xiao Liu, R. O. Pohl

cond-matarXiv:cond-mat/9911102

Abstract

The internal friction of e-beam amorphous silicon was measured in a magnetic field between 0 and 6 T, from 1.5-20 K, and was found to be independent of the field to better than 8%. It is concluded that the low energy excitations observed in this experiment are predominantly atomic in nature.

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