Internal Friction of Amorphous Silicon in a Magnetic Field
Abstract
The internal friction of e-beam amorphous silicon was measured in a magnetic field between 0 and 6 T, from 1.5-20 K, and was found to be independent of the field to better than 8%. It is concluded that the low energy excitations observed in this experiment are predominantly atomic in nature.
0
Turn this paper into a full lesson
ArcXiv compiles a staged curriculum from this paper: 8-12 lessons across beginner → advanced, synthesised section guides, visuals, flashcards, a quiz, exercises, and on-demand deep dives per section. Grounded in the abstract, never invented.