Electric field induced suppression of universal conductance fluctuations and dephasing in disordered systems
Arindam Ghosh, A. K. Raychaudhuri
Abstract
We report a novel phenomenon that the universal conductance fluctuations (UCF) can be suppressed by a small electric field E. The experiment has been carried out on single crystals of Si doped heavily with P and B beyond the critical composition of insulator to metal transition. The phenomenon is identified as a consequence of electric field induced dephasing of the electron wavefunction. Over the range of measurements, the observed dephasing rate (τϕ-1) varied as τϕ-1 = aT + bEq with q ≈ 1.3 and for E >> E*, a cross-over field, τϕ-1 Eq, independent of T. This experiment also establishes that the UCF can be utilized as a sensitive electron "interferometer" to measure dephasing rate.
Create a lesson
Related papers
Distinguishing Quantum Capacitance Signatures of a Topological Majorana Wire from a Normal Wire Segment
Binayyak Bhusan Roy, Jay Deep Sau, Sumanta Tewari
Band's Geometry Origin of Quantum Spin Transport Phenomena
Elena Derunova, Mazhar N. Ali
Trapping e/4 quasiparticles in bilayer graphene
Mario Di Luca, Emily Hajigeorgiou, Ning Ma et al.
Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices
Gabriel Natale, Uma Chirkova, Flávio Henriques Feres et al.
Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra et al.
Occupation-Driven Josephson Diode in a Symmetric Junction
Jianxiong Zhai, Zelei Zhang, Jiawei Yan