Analysis of Trapping and Detrapping in Semi-Insulating GaAs Detectors
M. Rogalla, Th. Eich, N. Evans, R. Geppert, R. Goeppert, R. Irsigler, J. Ludwig, K. Runge, Th. Schmid, D. G. Marder
Abstract
To investigate the trapping and detrapping in SI-GaAs particle detectors we analyzed the signals caused by 5.48 MeV alpha particles with a charge sensitive preamplifier. From the bias and temperature dependence of these signals we determine the activation energies of two electron traps. Additional simulation and measurements of the lifetime as a function of resistivity have shown that the EL2+ is the dominant electron trap in semi-insulating GaAs.
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