Analysis of trap spectra in LEC and epitaxial GaAs
J. Vaitkus, E. Gaubas, V. Kazukauskas, V. Rinkevicius, J. Storasta, R. Tomasiunas, K. M. Smith, V. O'Shea
Abstract
Different methods of trap parameter measurement are analysed. Transient photoconductivity and thermally stimulated effects were used to investigate the influence of traps in LEC SI-GaAs and high resistivity epitaxial GaAs. The peculiarities of the TSC were analysed and shown to be related to the influence of crystal micro-inhomogeneities.
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