Microscopic Theory of Spontaneous Decay in a Dielectric
Hao Fu, P. R. Berman
Abstract
The local field correction to the spontanous dacay rate of an impurity source atom imbedded in a disordered dielectric is calculated to second order in the dielectric density. The result is found to differ from predictions associated with both "virtual" and "real" cavity models of this decay process. However, if the contributions from two dielectric atoms at the same position are included, the virtual cavity result is reproduced.
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