Microscopic Theory of Spontaneous Decay in a Dielectric
Abstract
The local field correction to the spontanous dacay rate of an impurity source atom imbedded in a disordered dielectric is calculated to second order in the dielectric density. The result is found to differ from predictions associated with both "virtual" and "real" cavity models of this decay process. However, if the contributions from two dielectric atoms at the same position are included, the virtual cavity result is reproduced.
0
Turn this paper into a full lesson
ArcXiv compiles a staged curriculum from this paper: 8-12 lessons across beginner → advanced, synthesised section guides, visuals, flashcards, a quiz, exercises, and on-demand deep dives per section. Grounded in the abstract, never invented.