Microchannel avalanche photodiode with wide linearity range
Abstract
Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 105 and linearity range improved an order of magnitude compared to known similar devices. A distinctive feature of the new device is a directly biased p-n junction under each pixel which plays role of an individual quenching resistor. This allows increasing pixel density up to 40000 per mm2 and making entire device area sensitive.
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