Irradiation test on FD-SOI Readout ASIC of Pair-monitor

Abstract

We fabricated a readout ASIC with the fully depleted silicon-on-insulator (FD-SOI) technology for the pair-monitor. The pair-monitor is a silicon pixel device that measures the beam profile of the international linear collider. It utilizes the directional distribution of a large number of electron-positron pairs created by collision of bunches, and is required to tolerate radiation dose of about a few Mrad/year. The irradiation might cause the buried oxide layer of SOI to accumulate charges which interfere with intended functions. We thus performed extensive irradiation tests on the prototype ASIC, and the results are described in this paper.