On the Homogeneity of TiN Kinetic Inductance Detectors Produced through Atomic Layer Deposition

Abstract

The non-homogeneity in the critical temperature $T_{c}$ of an Microwave Kinetic Inductance Detector (MKID) could be caused by non-uniformity in the deposition process of the thin superconducting film. This produces low percent yield and frequency collision in the readout of the MKIDs. Here, we show the homogeneity that offers Atomic Layer Deposition (ALD). We report an improvement of up to a factor of 50 in the fractional variation of the $T_{c}$ for TiN MKIDs fabricated with Atomic Layer Deposition in comparison with MKIDs fabricated with sputtering. We measured the critical temperature of 48 resonators. We extracted the $T_{c}$ of the MKIDs by fitting the fractional resonance frequency to the complex conductivity of their resonators. We observed uniformity on the critical temperature for MKIDs belonging to the same fabrication process, with a maximum change in the $T_{c}$ of 60 mK for MKIDs fabricated on different wafers.