Radiation hardness study using SiPMs with single-cell readout
Abstract
A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to = 5e13 cm-2. The cell has a pitch of 15 μm. The fluence dependence of gain and turn-off voltage are reported. A reduction of the gain by 19% and an increase of Voff by ≈0.5 V is observed after = 5e13 cm-2.
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