Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features

Abstract

The optical properties of V graded InGaN solar cells are studied. Graded InGaN well structures with the indium composition increasing then decreasing in a V shaped pattern have been designed. Through polarization doping, this naturally creates alternating p-type and n-type regions. Separate structures are designed by varying the indium alloy profile from GaN to maximum indium concentrations ranging from 20% to 80%, while maintaining a constant overall structure thicknesses of 100 nm. The solar cell parameters under fully strained and relaxed conditions are considered. The results show that a maximum efficiency of 5.5%, under fully strained condition occurs at x=60%. Solar cell efficiency under relaxed conditions increases to a maximum of 8.3% at 90%. While Vegards law predicts the bandgap under relaxed conditions, a Vegard like law is empirically determined from the output of Nextnano for varying In compositions in order to calculate solar cell parameters under strain.