Gain Recovery in Heavily Irradiated Low Gain Avalanche Detectors by High Temperature Annealing
Abstract
Studies of annealing at temperatures up to 450 with LGADs irradiated with neutrons are described. It was found that the performance of LGADs irradiated with 1.5e15 n/cm2 was already improved at 5 minutes of annealing at 250. Isochronal annealing for 30 minutes in 50 steps between 300 and 450 showed that the largest beneficial effect of annealing is at around 350. Another set of devices was annealed for 60 minutes at 350 and this annealing significantly increased Vgl. The effect is equivalent to reducing the effective acceptor removal constant by a factor of 4. Increase of Vgl is the consequence of increased effective space charge in the gain layer caused by formation of electrically active defects or re-activation of interstitial Boron atoms.
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