Timing resolution from beam tests on thin LGADs down to 16.6 ps
Abstract
The paper reports on the timing resolution achieved with Low-Gain Avalanche Diodes (LGADs), optimised for extreme-fluence conditions, at the DESY Test Beam Facility using 4~GeV/c electrons. The LGADs adopt an n-in-p technology with a p+-type boron gain implant, co-implanted with carbon to mitigate acceptor deactivation due to irradiation. The substrate thickness of the sensors varies from 20 to 45~, with an active area spanning from 0.75~×~0.75 to 1.28~×~1.28~mm2. The experimental setup consisted of a 45~-thick trigger sensor with an active area of 3.6~×~3.6~mm2, two device-under-test (DUT) planes, and a Photonis micro-channel plate photomultiplier tube (MCP) as a time reference. Data taking was performed at the ambient temperature of the facility, at 18C. The gain was measured between 7 and 40 across all non-irradiated sensors in the study. The timing resolution was calculated from a Gaussian fitting of the difference in times of arrival of a particle at the DUT and the MCP, using the constant fraction discriminator technique. A timing resolution of 26.4~ was achieved in 45~-thick sensors, down to 16.6~ in 20~-thick sensors, in the non-irradiation study. The combination of two 20~-thick LGADs reached a timing resolution of 12.2~. A set of 30~-thick sensors irradiated with neutrons at fluences between 0.4~×~1015 and 2.5~×~1015~ were tested in the beam. These irradiated sensors achieved a gain between 7 and 30 using a similar apparatus but cooled with solidified CO2 to -42C. A timing resolution of 20~ was obtained in these irradiated sensors.
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