Some possible explanations of the discrepancies in the results of modelling the leakage current of detectors after hadron irradiation
Abstract
In this contribution we argue that the main discrepancies between model calculations and experimental data for leakage current after hadron irradiation could be explained considering the contributions of primary defects in silicon: vacancy, interstitial and SiFFCD defect. The source of discrepancies between data and previous modelling was tentatively attributed to the SiFFCD defect. Vacancies and interstitials have a major contribution to the current short time after irradiation. If these hypotheses are correct, thus, in conditions of continuous long time irradiation, as e.g. LHC and its upgrades in energy and luminosity, S-LHC and V-LHC respectively, these contributions will represent a major problem.
Turn this paper into a full lesson
ArcXiv compiles a staged curriculum from this paper: 8-12 lessons across beginner → advanced, synthesised section guides, visuals, flashcards, a quiz, exercises, and on-demand deep dives per section. Grounded in the abstract, never invented.