Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector
T. Rohe, D. Bortoletto, V. Chiochia, L. M. Cremaldi, S. Cucciarelli, A. Dorokhov, M. Konecki, K. Prokofiev, C. Regenfus, D. A. Sanders, S. Son, T. Speer, M. Swartz
Abstract
This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 neq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.
Create a lesson
Related papers
Mineral Detection of Neutrinos and Dark Matter 2026 Proceedings
Alexey Elykov, Patrick Stengel, Natsue Abe et al.
Commissioning and Performance of the Time-of-Flight Detector for the T2K Neutrino Oscillation Experiment
C. Alt, L. Amziane, N. Baudis et al.
Design and characterization of large-size monolithic layers of 3D-segmented plastic scintillator
Jon Berisha, Xingyu Zhao, Andrey Boyarintsev et al.
Proposing, never assigning: fair allocation of control-room shifts in experimental particle physics collaborations from ranked wishes under institutional quotas
Kamal Benslama
Terahertz Radar Inversion for Range-Resolved Solids Concentration Profiling in Gas--Solid Flows
Philip Kjaer Jepsen, Albert Monteith, Diana Carolina Guío-Pérez et al.
On the importance of cosmic-ray background in the Atomki anomaly
Hicham Benmansour, Gianluigi Boca, Gianluca Cavoto et al.