Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors
Ryan E. Warburton, Sara Pellegrini, Lionel Tan, Jo Shien Ng, Andrey Krysa, Kris Groom, John P. R. David, Sergio Cova, Gerald S. Buller
Abstract
This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection efficiency, afterpulsing and photon-timing jitter.
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