AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors
Abstract
Full size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3'' substrate wafers. PECVD deposited SiO2 and SiO2/Si3N4 layers were used to provide coupling capacitaces of 32.5 pF/cm and 61.6 pF/cm, respectively. The resistors are made of sputtered CERMET using simple lift of technique. The sheet resistivity of 78 kOhm/sq. and the thermal coefficient of resistance of less than 4x10-3 / degree C satisfy the demands of small area biasing resistors, working on a wide temperature range.
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