Revealing the MoS2 Growth Mechanism in Chemical Vapor Deposition: Real-Time Imaging and Statistical Analysis

Abstract

Chemical Vapor Deposition (CVD) is a promising method for scalable synthesis of two-dimensional transitional metal dichalcogenides (TMDs) such as MoS2, but challenges in reproducibility and controllability persist due to an incomplete understanding of their dynamic growth mechanisms. While in-situ characterization methods could provide valuable insights, it remains challenging to track a large ensemble of crystals to enable quantitative, statistical analysis. Here, we address this gap by developing and applying a semi-automated image processing pipeline to analyze in-situ optical microscopy footage of MoS2 growth. This framework enables the high-throughput reconstruction of complete growth trajectories for over 400 individual crystals from a single experiment. Our statistical analysis demonstrates that MoS2 crystallization is governed by an edge-attachment-limited mechanism rather than by precursor diffusion. Furthermore, MoS2 crystals exhibit non-competitive growth, indicating that precursor supply does not limit the growth of neighboring flakes until physical impingement occurs. These findings provide direct, quantitative evidence that advances the fundamental understanding of TMD growth, establishing a powerful methodology for rational optimization of the CVD growth of two-dimensional materials.