Subgrain-resolved Analysis of Degradation in Cu Metallization via Scanning 3DXRD and Thermomechanical Modeling

Abstract

Metallization layers play a key role in the performance and reliability of modern power semiconductor devices. During short-circuit events, rapid heating of power metallization layers induces thermomechanical incompatibility stresses, which may contribute to material degradation and impact device performance. In this work, potential degradation hotspots associated with thermomechanical loading in Cu power metallization are investigated using a combined experimental--computational approach. Scanning three-dimensional X-ray diffraction measurements are coupled with thermomechanical crystal plasticity simulations to probe the evolution of grain-resolved plastic deformation during rapid cyclic loading. This integrated approach provides insight into the microstructural processes governing degradation hotspot formation, laying the groundwork for future microstructure-informed, physics-based reliability assessment of Cu metallization.