Numerical Optimization of Two-Qubit Gates in Silicon Flip-Flop Qubit Arrays under Electrical Control
Lorenzo D'Onofrio, Elena Ferraro, Marco De Michielis
Abstract
Silicon-based donor flip-flop qubits offer a promising path toward scalable, fault-tolerant quantum computing by combining the long coherence times of nuclear spins with fast, fully electrical control and long-range dipole-dipole coupling between qubits. However, realizing high-fidelity entangling operations in this platform remains challenging. The entangling interaction is intrinsically coupled to electron orbital dynamics, which can lead to leakage into non-computational states and unwanted phase accumulation. Furthermore, in multi-qubit architectures, residual dipolar couplings from spectator qubits distort the effective interaction landscape. In this work, we employ a numerical simulation framework, FlipFlopQSim, that models the spin-orbital dynamics of interacting flip-flop qubits to extract effective logical operations from realistic electrical control pulses. Using Makhlin invariants, we map the entangling landscape generated by electrically controlled dipole-dipole interactions and identify operating regions locally equivalent to canonical two-qubit gates, such as iSWAP and iSWAP. We then optimize the control parameters of physically realizable, electrically driven Rz rotations to implement the necessary local corrections and maximize composite gate fidelity. Finally, we scale our analysis to multi-qubit registers with various geometries and connectivity patterns to evaluate spectator-induced distortions. Our results demonstrate that high-fidelity entangling operations cannot be optimized in isolation; rather, they require a co-design approach that simultaneously optimizes pulse control, local phase compensation, and physical device geometry. This work provides a robust numerical framework for assessing the scalability of electrically controlled silicon quantum processors and outlines key design principles for robust multi-qubit gate implementation.
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