Correlating spin and optical properties of quantum emitters in hBN

Abstract

Optically addressable spin defects in hexagonal boron nitride (hBN) are well suited for near-surface quantum sensing. They offer bright, wavelength-tunable single-photon emission with high optically detected magnetic resonance (ODMR) contrast at room temperature. Here we controllably synthesise a high density of spin-complex defects in carbon-doped hBN flakes. We find that the zero-field splitting parameter D is directly correlated with the zero-phonon line of an emitter, while the ODMR contrast shows no such correlation. We further analyse an individual narrowband defect showing 68% ODMR contrast and enhance its photon collection by ~40% using a solid immersion lens. By advancing both the practical synthesis of the spin complexes and the understanding of their microscopic origin, our results move us toward the deterministic creation of ODMR-active quantum emitters