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Anisotropic Phonon Heat Flow and Thermoelectric Response in Tetragonal GeS2 and GeSe2

Neeraj Kulhari, Krishna Swaroop Sharma, K. C. Bhamu

cond-mat.mtrl-sciarXiv:2608.03478

Abstract

The electronic structure, lattice dynamics, bonding, elastic response, and anisotropic thermoelectric transport properties of tetragonal GeS2 and GeSe2 were investigated using density functional theory, density functional perturbation theory, Wannier interpolation, and scattering-aware Boltzmann transport. The relaxed structures are mechanically and dynamically stable within the calculated harmonic description. The HSE03/Wannier band gaps are 2.48 eV for GeS2 and 1.23 eV for GeSe2, while substitution of S by Se lowers the upper phonon frequency from approximately 13.6 to 10.3 THz. The phonon Boltzmann transport calculations reveal pronounced lattice-transport anisotropy. Within the relaxation-time approximation, the 300 K in-plane and cross-plane lattice thermal conductivities are 26.86 and 1.19 W m-1 K-1 for GeS2, and 18.74 and 1.52 W m-1 K-1 for GeSe2, respectively. At 800 K, these values decrease to 10.22 and 0.46 W m-1 K-1 for GeS2, and 7.25 and 0.58 W m-1 K-1 for GeSe2. Frequency-resolved analysis shows that low-frequency phonons carry most of the heat, whereas the small cross-plane values reflect restricted out-of-plane phonon transport. Combining the ShengBTE RTA lattice tensors with AMSET electronic coefficients gives zT=0.257 for n-type cross-plane GeS2 at 800 K and 1019 cm-3. The corresponding PBE-AMSET estimate for GeSe2 is zT=0.066 for p-type cross-plane transport at 800 K and 3×1020 cm-3. LOBSTER analysis identifies mixed covalent--ionic Ge--X bonding, with Ge--S bonds having a larger stabilizing ICOHP magnitude than Ge--Se bonds (-5.27 versus -4.74 eV per bond). These results identify tetragonal GeX2 compounds as strongly anisotropic thermoelectrics with moderate calculated zT values whose cross-plane response benefits from suppressed lattice heat transport.

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