Electron Temperature and Electron-Electron Scattering Length in GaAs/AlGaAs Using Mesoscopic Multiparallel Aperture Geometries
Arati Thapa, Rishav Khatiwada, Prakash Sharma, Jean J. Heremans, Adbhut Gupta, Kirk W. Baldwin, Loren N. Pfeiffer, Mansour Shayegan
Abstract
Quantifying electron temperatures and electron-electron scattering lengths is essential for understanding electron transport regimes in two-dimensional systems. To that end, this work experimentally investigates low-temperature ballistic transport using semiclassical cyclotron orbits in a multiparallel aperture geometry. The mesoscopic geometry is fabricated on a GaAs/AlGaAs heterostructure of very high electron mobility. The amplitudes of maxima in magnetoresistance due to ballistic transport are observed to decay exponentially with temperature, allowing determination of the electron-electron scattering length from the data. A quantitative relation between electron temperature and an applied dc bias heating current is established by comparing magnetoresistance peak amplitudes measured as a function of temperature and dc bias, reflecting bias-induced Joule heating. In addition, the resistance measured near zero magnetic field decreases with increasing temperature, providing signatures of superballistic conductance.
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