Optical Anisotropy and Phase Matching in Non-Centrosymmetric Perovskite Oxides from DFT+U and DFT+U+V Functionals
Mohamed S. M. M. Ali, Ismaila Dabo
Abstract
Optical anisotropy underpins the operation and performance of a broad range of photonic and quantum technologies. In this work, we critically examine the accuracy of density functional theory approximations with onsite and intersite Hubbard corrections (the DFT+U and DFT+U+V functionals) in predicting the anisotropic optical response of the non-centrosymmetric perovskite oxides, such as BaTiO3, LiNbO3, KNbO3, and PbTiO3. It is found that correcting self-interaction errors using DFT+U alone does not capture the optoelectronic response of these materials, often leading to a suppression of their optical anisotropy. While intersite Hubbard interactions restore this anisotropy, the choice of the (inter)atomic orbital manifold that defines the Hubbard correction remains critical to its accuracy. The predictive performance of the resulting, systematically validated DFT+U+V functional is achieved at a fraction of the computational cost of hybrid functionals and many-body perturbation theory calculations. As benchmarks, we investigate Zn- and (Bi,Mn)-substituted BaTiO3 solid solutions; the latter exhibit polarization-dependent bandgap narrowing from mid-gap states, substantially enhancing the dichroic ratio and birefringence with promising implications for polarization-sensitive photodetectors and integrated photonics.
Create a lesson
Related papers
Divergence between long- and short-wavelength magnon damping in spinel ferrites
Christopher T. Parzyck, Octave Duros, Hari Paudyal et al.
An Atlas and Design Rules for Single- and Dual-Atom Alloys
Fabian Berger, Yicheng Wang, E. Charles H. Sykes et al.
Epitaxial inversion of spontaneous polarization in ε-Ga2O3
Yan Wang, Zhigao Xie, Weihua Tang et al.
Gauge-including neural-network quantum Monte Carlo for molecules in magnetic fields
Chengye Lü, Weizhong Fu, Xin-gao Gong et al.
Photoresponse properties of single-crystalline thick film based on high-entropy topological insulator (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3
Alexei Vasilev, Marina Zhezhu, Oleg Ivanov
Adaptive Substrate Support Based on Thin-Film Piezoelectric Actuators
Ertuğ Şimşek, Bas Jansen, Marcelo Ackermann et al.