Inducing metal-insulator transition via disorder in correlated kagome systems

Abstract

The metal-insulator transition is often accompanied by fascinating quantum phenomena, including superconducting domes, antiferromagnetic phase transitions, and quantum spin liquids. Concurrently, kagome materials are predominantly metallic, necessitating the realization of insulating states to fully exploit their significant potential in logic and optoelectronic device applications. To address this, we investigate the electronic transport and magnetic properties in correlated kagome systems with hopping disorder using the determinant quantum Monte Carlo method. Through comprehensive analysis of the kinetic energy, dc conductivity, and density of states at the Fermi level, we demonstrate that the cooperative interplay between hopping disorder and electron correlations promotes electron localization. Within the insulator, an increase in the disorder level reduces the Coulomb interaction required for the Mott transition. Additionally, while disorder partially suppresses antiferromagnetic ordering, it remains insufficient to induce a complete magnetic transition. Finally, we summarize two schematic regions distinguishing between antiferromagnetic metal, correlated Anderson insulator, and disordered Mott insulator. Our study advances the understanding of metal-insulator transition in kagome systems by disorder and provides actionable insights for experimental control of these transitions.